InGaAs APD Modules

Mohlala: GD6510Y/ GD6511Y/ GD6512Y

Tlhaloso e Khutšoanyane:

Ke indium gallium arsenide avalanche photodiode module e nang le pre-amplification circuit e nolofalletsang lets'oao le fokolang la hona joale hore le holisoe le ho fetoloa hore e be lets'oao la motlakase ho finyella ts'ebetso ea phetoho ea photon-photoelectric-signal amplification.

fumana qotso Khoasolla

Tekheniki Parameter

Li-tag tsa Sehlahisoa

Likaroloana

Frontside e khantšitse chip e bataletseng
Karabelo ya lebelo le phahameng
Kutlo e phahameng ea detector

Lisebelisoa

Khatiso ea laser
Puisano ea laser
Tlhokomeliso ea laser

Parameter ea photoelectric（@Ta=22±3℃）

Ntho #	Sehlopha sa liphutheloana	Bophara ba sebaka se nang le lifoto (mm)	Lethathamo la karabelo e ikhethang (nm)	Matla a ho senya (V)	Boikarabelo M=10 λ=1550nm (kV/W)	Nako ea ho phahama (ns)	Bophahamo ba motlakase (MHz)	Mocheso Coefficient T_a=-40℃～85℃ (V/℃)	Matla a lekanang le lerata(pW/√Hz)	Concentricity (μm)	Mofuta o fetotsoeng linaheng tse ling
GD6510Y	HO YA-8	0.2	1000 ~ 1700	30-70	340	5	70	0.12	0.15	≤50	C3059-1550-R2A
GD6511Y		0.5				10	35		0.21		−
GD6512Y		0.08				2.3	150		0.11		C3059-1550-R08B